INCHANGE Semiconductor
www.
DataSheet4U.
com
isc Silicon
NPN Darlington Power
Transistor
isc Product Specification
2SD864
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 1.
5A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.
5V(Max)@ IC= 1.
5A ·Complement to Type 2SB765
APPLICATIONS
·Medium speed and power switching applications.
i.
cnABSOLUTE MAXIMUM RATINGS (Ta=25℃)
.
iscsemSYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
120 V
wwwVCEO
Collector-Emitter Voltage
120 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
3A
ICM Collector Current-Peak Collector Power Dissipation
PC TC=...