Freescale Semiconductor Technical Data
Document Number: MRF8P23160WH Rev.
0, 12/2011
RF Power Field Effect
Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 2300 to 2400 MHz.
• CITDylQippAipci=anlg6D,0oC0hhmearAntyn, eVSlGinBSgaBlne=d--wC1i.
ad2rtrhVied=rcW3, .
P8--oC4uDMt =MH3Az0,PIWneprafutottsrmSAiagvnngca.
,el I:PQVADRMDa==g9n2.
i9t8uddVBeolt@s, 0.
01% Probability on CCDF.
Frequency 2300 MHz 2350 MHz 2400 MHz
Gps (dB) 13.
9 14.
1 13.
8
ηD Output PAR ACPR
(%)
(dB)
(dBc)
37.
1 7.
9 --31.
0
38.
3 7.
7 --32.
2
38.
3 7.
4 --33.
1
MRF8P23160WHR3 MRF8P23160WHSR3
2300--2400 MHz, 30 ...