Transistors
Power
Transistor (−80V, −4A)
2SB1644
2SB1644
!Features 1) Low saturation voltage.
(Typ.
VCE(sat) = −0.
5V at IC / IB = −3A / −0.
3A) 2) Excellent DC current gain characteristics.
!External dimensions (Units : mm)
13.
1 3.
2
10.
1
5.
08 2.
54
(3) (2) (1)
1.
24 0.
78
!Absolute maximum ratings (Ta = 25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Collector power dissipation Junction temperature Storage temperature
* Single pulse, Pw = 100ms
Symbol VCBO VCEO VEBO
IC
PC Tj Tstg
Limits −80 −80 −5 −4 −6 30 150 −55~+150
Unit V V V
A (DC)
*A (Pulse)
W (Tc = 25°C) °C °C
8.
8
1.
3 4.
5
1.
3 0.
4
0to0.
3
0.
5Min.
ROHM : PSD3 EIAJ : SC-...