Part Number
|
K3418 |
Manufacturer
|
Renesas |
Description
|
Silicon N-Channel MOSFET |
Published
|
Sep 29, 2015 |
Detailed Description
|
2SK3418
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 4.3 mΩ typ.
• Capab...
|
Datasheet
|
K3418
|
Overview
2SK3418
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 4.
3 mΩ typ.
• Capable of 4 V gate drive • High speed switching
Outline
TO-220AB
D
G
S1 2 3
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10µs, duty cycle ≤ 1%
2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS
VGSS
ID ID (pulse)Note1
IDR IAPNote3 EARNote3 PchNote2
Tch
Tstg
REJ03G0407-0200 (Previous ADE-208-941 (Z))
Rev.
2.
00 Sep.
10.
2004
1.
Gate 2.
Drain
(Flange...
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