CEP07N7/CEB07N7 CEF07N7
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
Type CEP07N7 CEB07N7 CEF07N7
VDSS 700V 700V
700V
RDS(ON) 1.
5Ω 1.
5Ω
1.
5Ω
ID 6.
6A 6.
6A 6.
6A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit TO-220/263 TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM e
PD
...