CEP1186/CEB1186 CEF1186
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
Type CEP1186 CEB1186 CEF1186
VDSS 800V
RDS(ON) 2.
3Ω
ID 6A
@VGS 10V
800V 2.
3Ω 6A 10V
800V 2.
3Ω
6A d 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h
Tc = 25 C unless otherwis...