CEK01N7
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
700V, 0.
3A, RDS(ON) = 18 Ω @VGS = 10V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TO-92(Bulk) & TO-92(Ammopack) package.
D
GD S TO-92(Ammopack)
GD S
TO-92(Bulk)
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 700
VGS ±30
Drain Current-Continuous Drain Current-Pulsed a
ID 0.
3 IDM 1.
2
Maximum Power Dissipation
PD 3.
1
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Leadb
Symbol RθJL
Limit 40
...