CEM8311
Dual P-Channel Enhancement Mode Field Effect
Transistor
FEATURES
-30V, -7.
9A, RDS(ON) = 20mΩ @VGS = -10V.
RDS(ON) = 33mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1 D1 D2 D2 876 5
5
SO-8
1
123 4 S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -30
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID -7.
9 IDM -31.
6
Maximum Power Dissipation
PD 2.
0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Res...