CEM6355
P-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
-60V, -6A, RDS(ON) = 45mΩ @VGS = -10V.
RDS(ON) = 65mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DD D D 8 7 65
SO-8
1
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -60
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID -6 IDM -24
Maximum Power Dissipation
PD 2.
5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, J...