CEH8205
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
20V, 5.
2A , RDS(ON) TYP = 25 mΩ @VGS = 4.
5V.
RDS(ON) TYP = 30mΩ @VGS = 2.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
Halogen free.
4 5 6
3 2 1 TSOP-6
G1(6)
D1(2)
G2(4) S1(1)
D2(5) S2(3)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 20
VGS ±12
Drain Current-Continuous Drain Current-Pulsed a
ID 5.
2 IDM 20
Maximum Power Dissipation
PD 1.
14
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance,...