CEP6601/CEB6601 CEF6601
P-Channel Enhancement Mode Field Effect
Transistor
FEATURES
-60V, -19A, RDS(ON) = 86mΩ @VGS = -10V.
RDS(ON) = 125mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS -60
VGS ±20
ID -19 -16d
IDM -76 -64d
PD
50 46 0.
4 0.
3
Ope...