STH12NA60/FI STW12NA60
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS
TRANSISTOR
TYPE
STH12NA60 STH12NA60FI STW12NA60
VDSS
600 V 600 V 600 V
R DS( on)
0.
6 Ω 0.
6 Ω 0.
6 Ω
ID
12 A 7A 12 A
s TYPICAL RDS(on) = 0.
44 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCES s GATE GHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLICATI...