Power
Transistors
2SB1255
Silicon
PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD1895
Unit: mm
12.
5 3.
5 15.
0±0.
2 0.
7
s Features
q Optimum for 90W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): –2.
5V q Full-pack package which can be installed to the heat sink with
one screw
21.
0±0.
5
15.
0±0.
3 11.
0±0.
2
φ3.
2±0.
1
5.
0±0.
2 3.
2
2.
0±0.
2
2.
0±0.
1
Solder Dip
16.
2±0.
5
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
1.
1±0.
1
5.
45±0.
3 10.
9±0.
5
0.
6±0.
2
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Col...