NP160N04TUJ
MOS FIELD EFFECT
TRANSISTOR
Preliminary Data Sheet
R07DS0021EJ0100 Rev.
1.
00
Jul 01, 2010
Description
The NP160N04TUJ is N-channel MOS Field Effect
Transistor designed for high current switching applications.
Features
• Low on-state resistance ⎯ RDS(on) = 2.
0 mΩ MAX.
(VGS = 10 V, ID = 80 A)
• Low Ciss: Ciss = 6900 pF TYP.
(VDS = 25 V, VGS = 0 V) • Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP160N04TUJ -E1-AY ∗1 NP160N04TUJ -E2-AY ∗1
LEAD PLATING Pure Sn (Tin)
PACKING Tape 800 pcs/reel
Note: ∗1.
Pb-free (This product does not contain Pb in the external electrode.
)
Package TO-263-7pin, Taping (E1 type) TO-263-7pin, Taping (E2 typ...