INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SD732
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V (Min) ·High Current Capability ·Complement to Type 2SB696
APPLICATIONS ·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
150 V
VCEO
Collector-Emitter Voltage
120 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
8A
ICM Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
12 A 80 W 150 ℃ -40~150 ℃
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