DFN2020MD-6
PMPB13XNE
30 V, single N-channel Trench MOSFET
26 November 2014
Product data sheet
1.
General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits
• 1 kV ESD protection • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.
65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated, 100% solderable side pads for optical solder inspection
3.
Applications
• Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portables • Hard disk and computing power...