2SK3669
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (π-MOS VII)
2SK3669
Switching
Regulator, Audio Amplifier and Motor Drive Applications
Unit: mm
• Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 6 S (typ.
) • Low leakage current: IDSS = 100 μA (max) (VDS = 100 V) www.
DataSheet•4U.
cEonmhancement mode : Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
DC (Note 1)
Drain current
Pulse (tw ≤ 10 ms) (Note 1)
Pulse (tw ≤ 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pu...