DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
NP110N04PDG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The NP110N04PDG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
R
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
NP110N04PDG-E1-AZ Note
Pure Sn (Tin)
NP110N04PDG-E2-AZ Note
Note See “TAPE INFORMATION”
PACKING Tape
800 p/reel
PACKAGE TO-263 (MP-25ZP)
typ.
1.
5 g
FEATURES
• Channel temperature 175 degree rating • Super low on-state resistance
RDS(on)1 = 1.
8 mΩ MAX.
(VGS = 10 V, ID = 55 A) RDS(on)2 = 3.
2 mΩ MAX.
(VGS = 4.
5 V, ID = 55 A)
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
Gate to Source...