Part Number
|
HY628400 |
Manufacturer
|
Hynix Semiconductor |
Description
|
512K x 8bit CMOS SRAM |
Published
|
Oct 12, 2015 |
Detailed Description
|
HY628400 Series
512Kx8bit CMOS SRAM
DESCRIPTION
The HY628400 is a high-speed, low power and 4M bits CMOS SRAM organize...
|
Datasheet
|
HY628400
|
Overview
HY628400 Series
512Kx8bit CMOS SRAM
DESCRIPTION
The HY628400 is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits.
The HY628400 uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and low power circuit technology.
It is particulary well suited for use in high-density and low power system applications.
This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.
0V.
Product
Voltage Speed Operation
No.
(V) (ns) Current(mA)
HY628400
5.
0 55/70/85
10
Note 1.
Normal : Normal Temperature
2.
Current value are max.
FEATURES
• Fully static operation and Tri-st...
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