Part Number
|
IRF2804LPbF |
Manufacturer
|
International Rectifier |
Description
|
HEXFET Power MOSFET |
Published
|
Oct 16, 2015 |
Detailed Description
|
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repeti...
|
Datasheet
|
IRF2804LPbF
|
Overview
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
PD - 95332B
IRF2804PbF IRF2804SPbF IRF2804LPbF
HEXFET® Power MOSFET
D VDSS = 40V
G RDS(on) = 2.
0mΩ
S ID = 75A
TO-220...
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