Part Number
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FQA9N90_F109 |
Manufacturer
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Fairchild Semiconductor |
Description
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N-Channel QFET MOSFET |
Published
|
Oct 18, 2015 |
Detailed Description
|
FQA9N90_F109 — N-Channel QFET® MOSFET
FQA9N90_F109
N-Channel QFET® MOSFET
900 V, 8.6 A, 1.3 Ω
May 2014
Features
• 8.6...
|
Datasheet
|
FQA9N90_F109
|
Overview
FQA9N90_F109 — N-Channel QFET® MOSFET
FQA9N90_F109
N-Channel QFET® MOSFET
900 V, 8.
6 A, 1.
3 Ω
May 2014
Features
• 8.
6 A, 900 V, RDS(on) = 1.
3 Ω (Max.
) @ VGS = 10 V, ID = 4.
3 A • Low Gate Charge (Typ.
55 nC) • Low Crss (Typ.
25 pF) • 100% Avalanche Tested • RoHS Compliant
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and...
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