IRF3805S-7PPbF IRF3805L-7PPbF Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
HEXFET® Power MOSFET D VDSS = 55V G RDS(on) = 2.
6mى S S (Pin 2, 3, 5, 6, 7) G (Pin 1) ID...

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