Transistors
2SC1359
Silicon
NPN epitaxial planar type
For high-frequency amplification Complementary to 2SA0838
5.
0±0.
2
Unit: mm 4.
0±0.
2
5.
1±0.
2
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency fT
0.
7±0.
1
■ Absolute Maximum Ratings Ta = 25°C
0.
7±0.
2 12.
9±0.
5
/ Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
30
V
c type Collector-emitter voltage (Base open) VCEO
20
V
n d ge.
ed Emitter-base voltage (Collector open) VEBO
5
2.
3±0.
2
V
le sta ntinu Collector current
IC
30
mA
a e cyc isco Collector power dissipation
PC
400
mW
life d, d Junction temperature
Tj
150
°C
n u duct type Storage temperatur...