Part Number
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TC58NVG0S3HTA00 |
Manufacturer
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Toshiba |
Description
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1 GBIT (128M x 8 BIT) CMOS NAND E2PROM |
Published
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Oct 19, 2015 |
Detailed Description
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TC58NVG0S3HTA00
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1G BIT (128M 8 BIT) CMOS NAND E2PROM
DESCRIP...
|
Datasheet
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TC58NVG0S3HTA00
|
Overview
TC58NVG0S3HTA00
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1G BIT (128M 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58NVG0S3HTA00 is a single 3.
3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 128) bytes 64 pages 1024blocks.
The device has a 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments.
The Erase operation is implemented in a single block unit (128 Kbytes 8 Kbytes: 2176 bytes 64 pages).
The TC58NVG0S3HTA00 is a serial-type memory device which utilizes the I/O pins for both address and data i...
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