Part Number
|
TC58BYG1S3HBAI4 |
Manufacturer
|
Toshiba |
Description
|
2-GBIT (256M x 8 BIT) CMOS NAND E2PROM |
Published
|
Oct 19, 2015 |
Detailed Description
|
TC58BYG1S3HBAI4
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2 GBIT (256M × 8 BIT) CMOS NAND E2PROM
DESCRIP...
|
Datasheet
|
TC58BYG1S3HBAI4
|
Overview
TC58BYG1S3HBAI4
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2 GBIT (256M × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58BYG1S3HBAI4 is a single 1.
8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.
The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments.
The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
The TC58BYG1S3HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and data...
Similar Datasheet