Part Number
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TH58BVG3S0HBAI4 |
Manufacturer
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Toshiba |
Description
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8 GBIT (1G x 8 BIT) CMOS NAND E2PROM |
Published
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Oct 19, 2015 |
Detailed Description
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TH58BVG3S0HBAI4
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
8 GBIT (1G × 8 BIT) CMOS NAND E2PROM
DESCRIPTI...
|
Datasheet
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TH58BVG3S0HBAI4
|
Overview
TH58BVG3S0HBAI4
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
8 GBIT (1G × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TH58BVG3S0HBAI4 is a single 3.
3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.
The device has a 4224-byte static register which allows program and read data to be transferred between the register and the memory cell array in 4224-bytes increments.
The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages).
The TH58BVG3S0HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and data ...
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