Part Number
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TH58NYG4S0FBAID |
Manufacturer
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Toshiba |
Description
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16 GBIT (2G x 8 BIT) CMOS NAND E2PROM |
Published
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Oct 19, 2015 |
Detailed Description
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TH58NYG4S0FBAID
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16 GBIT (2G × 8 BIT) CMOS NAND E2PRO...
|
Datasheet
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TH58NYG4S0FBAID
|
Overview
TH58NYG4S0FBAID
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16 GBIT (2G × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TH58NYG4S0F is a single 1.
8V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks.
The device has two 4328-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4328-byte increments.
The Erase operation is implemented in a single block unit (256 Kbytes + 14.
5 Kbytes: 4328 bytes × 64 pages).
The TH58NYG4S0F is a serial-type memory device which utilizes the I/O pins for both address...
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