1N957B.
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1N963B Vishay Telefunken Silicon Z–Diodes Features D D D D Very sharp reverse characteristic Very high stability Low reverse current level VZ–tolerance ± 5% Applications 94 9367 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions TL 75°C x Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 200 –65.
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+200 Unit mW mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=9.
5mm (3/8”), TL=constant Symbol RthJA Value 300 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.
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