AO5404E N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO5404E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V.
This device is suitable for use as a load switch or in PWM applications.
AO5404E and AO5404EL are electrically identical.
-RoHS compliant -AO5404EL is Halogen Free
Features
VDS (V) = 20V ID = 0.
5 A (VGS = 4.
5V) RDS(ON) 0.
55 Ω (VGS = 4.
5V) RDS(ON) 0.
68 Ω (VGS = 2.
5V) RDS(ON) 0.
80 Ω (VGS = 1.
8V)
ESD PROTECTED!
SC89-3L
D
D
G
S G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
Drain-Source Voltage
VDS 20
Gate-Sou...