AOI472 N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AOI472 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and general purpose applications.
Standard product AOI472 is Pb-free (meets ROHS & Sony 259 specifications).
Features
1.
4
VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) 6.
4 mΩ (VGS = 10V) RDS(ON) 9.
7 mΩ (VGS = 4.
5V)
UIS Teste1d93 Rg,Ciss,Co1s8s,Crss Tested
IPAK
D
GD S
Top View Drain Connected to Tab
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC...