Part Number
|
IXTH14N80 |
Manufacturer
|
IXYS |
Description
|
MegaMOS MFET |
Published
|
Oct 27, 2015 |
Detailed Description
|
MegaMOSTMFET
N-Channel Enhancement Mode
IXTH 14N80
VDSS = 800 V
ID25 = 14 A RDS(on) = 0.70 Ω
Symbol
Test Conditions
...
|
Datasheet
|
IXTH14N80
|
Overview
MegaMOSTMFET
N-Channel Enhancement Mode
IXTH 14N80
VDSS = 800 V
ID25 = 14 A RDS(on) = 0.
70 Ω
Symbol
Test Conditions
VDSS V
DGR
VGS VGSM
ID25 IDM
PD
TJ TJM Tstg
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GS
=
1
MΩ
Continuous
Transient
TC = 25°C TC = 25°C, pulse width limited by TJM
TC = 25°C
Max.
lead temperature for soldering 300 1.
6 mm (0.
063 in) from case for 10 s
Md Weight
Mounting torque
Maximum Ratings
800 800 ±20 ±30
14 56 300 -55 .
.
.
+150 150 -55 .
.
.
+150
V V V V A A W °C °C °C
°C
TO-247 AD
G = Gate, S = Source,
D (TAB)
D = Drain, TAB = Drain
1.
13/10 Nm/lb.
in.
6g
Features
l International standard package l Low RDS (on) HDMOSTM process l Rugged polysilicon g...
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