CPH5871
Power MOSFET 30V, 52mΩ, 3.
5A, Single N-Channel with
Schottky Diode
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Features
• Composite Type with a N-channel Sillicon MOSFET and a
Schottky Barrier Diode Contained in One Package
Facilitating High-density Mounting • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance [MOSFET] • High Speed Switching [MOSFET] • 1.
8V Drive [SBD] • Short Reverse Recovery Time [SBD] • Low Forward Voltage
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
[MOSFET]
Drain to Source Voltage Gate to Source Voltage Drain Current (DC)
VDSS VGSS ID
Drain Current (Pulse) PW≤10μs, duty cycle≤1%
IDP
Power Dissipation When mounted on ceramic substrate (6...