Ordering number : ENA1821A
EMH2801
P-Channel Power MOSFET
–20V, –3A, 85mΩ, Single EMH8 with
Schottky Diode
http://onsemi.
com
Features
• Composite type with a P-Channel Sillicon MOSFET and a
Schottky Barrier Diode contained in one package
facilitating high-density mounting
• [MOSFET] • Low ON-resistance
• 1.
8V drive
• [SBD]
• Small switching noise
• Low forward voltage (IF=2.
0A, VF max=0.
46V)
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS ID IDP PD Tch Tstg
Co...