IXDR 35N60 BD1 IGBT with optional Diode High Speed, Low Saturation Voltage VCES = 600 V IC25 = 38 A V =CE(sat) typ 2.
2 V C ISOPLUS 247TM G E G C E Isolated back surface G = Gate, C = Collector , E = Emitter TAB = Collector Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg VISOL FC Weight Symbol V (BR)CES VGE(th) ICES I GES VCE(sat) Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp =1 ms VGE= ±15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load, L = 30 µH VGE= ±15 V, VCE = 600 V, TJ = 125°C RG = 10 Ω, non repetitive TC = 25°C IGBT Diode 50/60 Hz RMS; IISOL ≤ 1 mA mounting force with clip typi...

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