Ordering number : EN8985A ATP216 N-Channel Power MOSFET 50V, 35A, 23mΩ, Single ATPAK http://onsemi.
com Features • ON-resistance RDS(on)1=17mΩ(typ.
) • 1.
8V drive • Protection diode in • Slim package • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Note :*1 VDD=10V, L=100μH, IAV=18A *2 L≤100μH, Single pulse EAS IAV Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 50 ±10 35 105 40 150 --55 to +15...

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