NDD04N50Z N-Channel Power MOSFET 500 V, 2.
7 W Features • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Continuous Drain Current RqJC Continuous Drain Current RqJC, TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 3.
4 A ESD (HBM) (JESD22−A114) Peak Diode Recovery VDSS ID ID IDM PD VGS EAS Vesd dv/dt 500 3.
0 1.
9 12 61 ±30 120 2800 4.
5 (Note 1) V A A A W V mJ V V/ns Continuous Source Curr...

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