Transistors
10V Drive Nch MOS FET
RDN050N20
RDN050N20
zStructure Silicon N-channel MOS FET
zFeatures 1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.
zApplication Switching
zExternal dimensions (Unit : mm)
TO-220FN
10.
0 φ3.
2
4.
5 2.
8
15.
0 12.
0 8.
0
(1)Gate (2)Drain (3)Source
14.
0 5.
0
1.
2 1.
3
0.
8
2.
54 2.
54 (1) (2) (3)
0.
75
2.
6
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RDN050N20
Bulk −
500
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current
Continuous Pulsed
ID IDP ∗1
Reverse Drain Current
Continuous Pulsed
IDR ...