Part Number
|
RCX510N25 |
Manufacturer
|
Rohm |
Description
|
SILICON N-CHANNEL MOS FET |
Published
|
Nov 4, 2015 |
Detailed Description
|
PRODUCTS TO-220FM
TYPE
RCX510N25
PAGE 1/4
1.TYPE
RCX510N25
2.STRUCTURE
SILICON N-CHANNEL MOS FET
3.APPLICATIONS ...
|
Datasheet
|
RCX510N25
|
Overview
PRODUCTS TO-220FM
TYPE
RCX510N25
PAGE 1/4
1.
TYPE
RCX510N25
2.
STRUCTURE
SILICON N-CHANNEL MOS FET
3.
APPLICATIONS SWITCHING
4.
ABSOLUTE MAXIMUM RATINGS [Ta=25℃]
DRAIN-SOURCE VOLTAGE
VDSS ・・・ 250V
GATE-SOURCE VOLTAGE
VGSS ・・・ ±30V
DRAIN CURRENT
CONTINUOUS PULSED
ID IDP
SOURCE CURRENT (BODY DIODE)
CONTINUOUS PULSED
IS ISP
・・・ ±51A*
・・・ ±204A* PW≦10μs DUTY CYCLE≦1%
・・・ 51A*
・・・ 204A* PW≦10μs DUTY CYCLE≦1%
TOTAL POWER DISSIPATION
PD ・・・ 40W (Tc=25℃)
CHANNEL TEMPERATURE
Tch ・・・ 150℃
RANGE OF STORAGE TEMPERATURE Tstg ・・・ -55~150℃
5.
THERMAL RESISTANCE CHANNEL TO CASE
Rth(ch-c) ・・・ 3.
13oC/W * Limited only by maximum channel temperature allowed
DESIGN
CHECK
APPROVAL DATE:2...
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