Part Number
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RT1E050RP |
Manufacturer
|
Rohm |
Description
|
MOSFET |
Published
|
Nov 5, 2015 |
Detailed Description
|
4V Drive Pch MOSFET
RT1E050RP
Structure Silicon P-channel MOSFET
Features 1) Low on-resistance. 2) High power package...
|
Datasheet
|
RT1E050RP
|
Overview
4V Drive Pch MOSFET
RT1E050RP
Structure Silicon P-channel MOSFET
Features 1) Low on-resistance.
2) High power package.
3) 4V drive.
Application Switching
Dimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol :UD
Packaging specifications
Package Type Code
Basic ordering unit (pieces) RT1E050RP
Taping TR 3000 ○
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Drain-source voltage Gate-source voltage
Drain current
Source current (Body Diode) Power dissipation
Continuous Pulsed Continuous Pulsed
VDSS VGSS
ID IDP *1 IS ISP *1 PD *2
30 20 5 20 1 20 1.
25
Channel temperature
Tch 150
Range of storage temperature
Tstg 55 to +150
*1...
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