Ordering number : ENA1444B SFT1341 Power MOSFET –40V, 112mΩ, –10A, Single P-Channel Features • Low On-Resistance • Low Gate Charge • ESD Diode-Protected Gate • High Speed Switching • Low Gate Drive Voltage • Pb-free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) Drain Current PW≤10μs, duty cycle≤1% ID IDP Power Dissipation Junction Temperature Storage Temperature Tc=25°C PD Tj Tstg Thermal Resistance Ratings Parameter Junction to Case Steady State Junction to Ambient *1 Note : *1 Insertion mounted Symbol RθJC RθJA Value –40 ±10 –10 –40 1.
0 15 150 −55 to +...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)