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Part Number
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STT6N3LLH6 |
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Manufacturer
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STMicroelectronics |
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Description
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MOSFET |
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Published
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Nov 5, 2015 |
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Detailed Description
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STT6N3LLH6
N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™ Power MOSFET in a SOT23-6L package
Datasheet - prod...
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Datasheet
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STT6N3LLH6
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Overview
STT6N3LLH6
N-channel 30 V, 0.
021 Ω typ.
, 6 A STripFET™ VI DeepGATE™ Power MOSFET in a SOT23-6L package
Datasheet - production data
4 5 6
3 2 1
SOT23-6L
Features
Order code STT6N3LLH6
VDSS RDS(on) max ID PTOT
0.
025 Ω
(VGS= 10 V)
30 V
6 A 1.
6 W
0.
036 Ω
(VGS= 4.
5 V)
• RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power losses
Figure 1.
Internal schematic diagram
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
th
developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest RDS(on) in all ...
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