STS3P6F6 P-channel 60 V, 0.
13 Ω typ.
, 3 A STripFET™ F6 Power MOSFET in a SO-8 package Datasheet - production data Features 8 76 5 4 123 SO-8 Figure 1.
Internal schematic diagram D (5,6,7,8) Order code STN3P6F6 VDSS 60 V RDS(on)max 0.
16 Ω @ 10 V • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power losses ID 3A Applications • Switching applications Description This device is a P-channel Power MOSFET developed using the 6th generation of STripFET™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
G (4) S (1,2,3) Order code STS3P6F6 Table 1.
Device summa...

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