STD9NM40N, STP9NM40N N-channel 400 V, 0.
73 Ω typ.
, 5.
6 A MDmesh™ II Power MOSFET in DPAK and TO-220 packages Datasheet — production data Features Order codes STD9NM40N STP9NM40N VDSS@TJMAX RDS(on)max.
ID 450 V 0.
79 Ω 5.
6 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high efficienc...

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