Isolated Gate Driver
Gate Driver for SiC SJT with Output and Signal Isolation
Features
Requires single 12 V voltage supply Pin Out compatible with MOSFET driver boards Multiple Internal level topology for low drive losses High-side drive capable with 3000 V isolation 5000 V Signal Isolation (up to 10 s) Capable of high gate currents with 3 W maximum power RoHS Compliant
Product Image
GA03IDDJT30-FR4
VISOLATION PDRIVE fmax
= 3000 V = 5W = 350 kHz
Section I: Introduction
The GA03IDDJT30-FR4 provides an optimized gate drive solution for SiC Junction
Transistors (SJT).
The board utilizes DC/DC converters and FOD3182 opto-isolators making it capable of driving high and low-sid...