OptiMOS® Power-
Transistor
Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated ° Pb-f.
ree lead plating; RoHS compliant
SPD30N03S2L-07 G
Product Summary
VDS 30 V
RDS(on) 6.
7
ID 30
PG-TO252-3
mΩ A
Type
Package
Marking
SPD30N03S2L-07G PG-TO252-3
2N03L07
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
TC=25°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=30 A , VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt
IS=30A, VDS=24V, di/dt=...