Type
OptiMOSTM Power-
Transistor
Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21
Product Summary VDS RDS(on),max ID Qoss Qg(0V.
.
10V)
IPB026N06N
60 V 2.
6 mW 100 A 65 nC 56 nC
PG-TO263-3
Type IPB026N06N
Package PG-TO263-3
Marking 026N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
100 A 100
V GS=10 V, T C=25 °C, R thJA =50K/W
25
Pulsed dr...