Type
OptiMOSTM Power-
Transistor
Features • Optimized for high performance SMPS, e.
g.
sync.
rec.
• 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21
IPI029N06N
Product Summary VDS RDS(on),max ID QOSS QG(0V.
.
10V)
60 V 2.
9 mW 100 A
65 nC 56 nC
PG-TO262-3
Type IPI029N06N
Package PG-TO262-3
Marking 029N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
100 A 100
V GS=10 V, T C=25 °C, R thJA =50K/W
24
Pulsed dr...