INCHANGE Semiconductor
isc Silicon
PNP Power
Transistor
DESCRIPTION ·Good Linearity of hFE · Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·Complement to Type 2SD2033
APPLICATIONS ·Designed for use in high voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO Emitter-Base Voltage
-5.
0 V
IC Collector Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
-1.
5 A
1.
8 W
20
150 ℃
-55~150
℃
Product Specification
2SB1353
isc website：www.
iscsemi.
cn
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