Part Number
|
FLU35XM |
Manufacturer
|
Eudyna Devices |
Description
|
L-Band Medium & High Power GaAs FET |
Published
|
Nov 23, 2015 |
Detailed Description
|
FEATURES
• High Output Power: P1dB=35.5dBm (Typ.) • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic...
|
Datasheet
|
FLU35XM
|
Overview
FEATURES
• High Output Power: P1dB=35.
5dBm (Typ.
) • High Gain: G1dB=12.
5dB (Typ.
) • High PAE: ηadd=46% (Typ.
) • Hermetic Metal/Ceramic (SMT) Package
• Tape and Reel Available
FLU35XM
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLU35XM is a GaAs FET designed for base station applications in the PCN/PCS frequency range.
This is a new product series that uses a surface mount package that has been optimized for high volume cost driven applications.
Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
VDS
Gate-Source Voltage...
Similar Datasheet