l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required.
With two die per package, the IRF5810 can provide the functionality of two SOT-23 packages in a smaller footprint.
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